Band lineup modification by Ge interlayer deposition at II–VI/III–V semiconductor heterojunctions
作者： P. Rodríguez-Hernández , M. González-Diaz , M. Fuentes-Cabrera , A. Mujica , A. Muñoz
DOI: 10.1016/0169-4332(95)00266-9
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摘要: Abstract We present as study of the atomic and electronic properties non-polar GaAs ZnSe (110) interface by means first principles total energy calculations based on density functional theory. The effect deposition Ge monolayers at semiconductor is analyzed in order to investigate extent which band lineup can be modified interlayer chemically different elements heterojunction. Depending arrangement atoms region, an dipole created that modifies lineup. Our results clearly show possibility offset control interface.
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