MoS 2 Field-Effect Transistors With Lead Zirconate-Titanate Ferroelectric Gating
作者： Xiao-Wen Zhang , Dan Xie , Jian-Long Xu , Yi-Lin Sun , Xian Li
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摘要: We report back gate field-effect transistors (FETs) with few-layered MoS2 nanosheet controlled by lead-zirconate-titanate (PZT) ferroelectric gating. The PZT gating (MoS2-PZT FETs) exhibit reproducible hysteresis and nonvolatile memory behaviors high stability, which can be attributed to the polarization screening from interface adsorbates charge dynamic trapping/detrapping into defect states. ON/OFF states ratios windows have little change channel scaling 2 $\mu \text{m}$ 200 nm, revealing has not obvious influence on MoS2-PZT FET properties, suggests a promising candidate for future non-volatile applications.
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