Study of selenium electrodeposition at gold electrode by voltammetric and rotating disc electrode techniques

摘要: Abstract The electrodeposition process of selenium has been studied by voltammetry (CV) in connection with a rotating disc electrode (RDE) technique. paper discusses the mechanism and rate-determining step Se deposition. It determined that rate monolayer-forming observed at ca. 0.6 V vs. NHE is diffusion controlled, not surface activation barrier-dependent. proposed this an overpotential deposition (OPD) underpotential (UPD). coefficient for reacting species was as 2.2 × 10 −5  cm 2  s −1 . are to be identified HSeO 3 − ions. transfer coefficient, α , calculated 0.3, exchange current density, j o 1.1 × 10 −6  A cm −2 constant, k 9.1 × 10 −7  cm s respectively. Analysis RDE data recorded bulk taking place −0.1 V fitting them either Levich or Koutecký–Levich equation indicates diffusion-dependent one.  s. These data, together experimental condition (pH) allow one propose H SeO molecules those being reduced during formation deposited layer. 0.1, exchange-current 7.7 × 10 1.6 × 10 −4 comparison kinetic parameters six-electron four-electron processes proves reaction responsible building up film reaction.