作者: D.A. Humphreys , R.J. King , D. Jenkins , A.J. Moseley
DOI: 10.1049/EL:19850839
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摘要: The absorption coefficient of p + -, - -and n -doped Ga 0.47 In 0.53 As layers, grown lattice-matched to InP, has been calculated over the wavelength range 1.0-1.7 μm from transmission and reflection measurements.