Disorder, band offsets and dopability of transparent conducting oxides
作者： John Robertson
DOI: 10.1016/J.TSF.2007.03.092
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摘要: N-type transparent conducting oxides are based on ionic with s-like cation conduction bands. The effect of disorder their band states is found to be small, because angular has no s states. Aliovalent impurities give rise shallow at the band, which leads an absence a tail localized This higher electron mobility than in typical p state amorphous materials like a-Si, ability move Fermi level well into and electrical instability as a-Si:H. offsets used suggest appropriate oxide dielectrics for thin transistors.
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