Safety comparisons of various gas source deposition technologies for large-scale production of III–V solar cells

作者: L.D. Partain , L.M. Fraas , P.S. McLeod , J.A. Cape

DOI: 10.1016/0379-6787(87)90079-2

关键词:

摘要: Abstract III–V solar cells offer potential advantages in efficiency and cost for making photovoltaic power systems economic large-scale utility applications. Relatively safe manufacturing technologies have been developed to fabricate electronic devices but the scale involved has introduced new safety challengs. Gas source fabrication offers including ease of gas materials handling control. However, present such as metal-organic chemical vapor deposition (MOCVD) molecular beam epitaxy (MOMBE) involve significant injury from toxic used. This risk can be greatly reduced by advanced technology vacuum (VCE). MOCVD problems low utilization with large quantities effluent, fragile quartz components, cold chamber walls that rapidly build-up residues, no load lock personnel protection hydrogen explosions. However scaled up medium production levels cells. In contrast MOMBE rugged metal walls, locks higher some gases. But builds residues on surfaces it is not readily scaleable level volumes. VCE combines many best characteristics MBE. These include all materials, hot residue rates, outer an inherent scalability levels.

参考文章(13)
H. C. Hamaker, C. W. Ford, J. G. Werthen, G. F. Virshup, N. R. Kaminar, D. L. King, J. M. Gee, 26% efficient magnesium‐doped AlGaAs/GaAs solar concentrator cells Applied Physics Letters. ,vol. 47, pp. 762- 764 ,(1985) , 10.1063/1.96031
N. Pütz, H. Heinecke, E. Veuhoff, G. Arens, M. Heyen, H. Lüth, P. Balk, Photostimulated growth of GaAs in the MOCVD system Journal of Crystal Growth. ,vol. 68, pp. 194- 199 ,(1984) , 10.1016/0022-0248(84)90416-0
LM Fraas, PS McLeod, LD Partain, JA Cape, Epitaxial growth from organometallic sources in high vacuum Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 4, pp. 22- 29 ,(1986) , 10.1116/1.583445
R.H. Moss, Adducts in the growth of III–V compounds Journal of Crystal Growth. ,vol. 68, pp. 78- 87 ,(1984) , 10.1016/0022-0248(84)90401-9
J. L. Tandon, Y. C. M. Yeh, Large‐Scale Growth of GaAs Epitaxial Layers by Metal Organic Chemical Vapor Deposition Journal of The Electrochemical Society. ,vol. 132, pp. 662- 668 ,(1985) , 10.1149/1.2113925
E. Veuhoff, W. Pletschen, P. Balk, H. Lüth, Metalorganic CVD of GaAs in a molecular beam system Journal of Crystal Growth. ,vol. 55, pp. 30- 34 ,(1981) , 10.1016/0022-0248(81)90267-0
L.M. Fraas, J.A. Cape, L.D. Partain, P.S. McLeod, High efficiency concentrator solar cells Solar Cells. ,vol. 12, pp. 67- 80 ,(1984) , 10.1016/0379-6787(84)90057-7
E. A. DeMeo, R. W. Taylor, Solar photovoltaic power systems: an electric utility R & d perspective. Science. ,vol. 224, pp. 245- 251 ,(1984) , 10.1126/SCIENCE.224.4646.245
P.D. Dapkus, H.M. Manasevit, K.L. Hess, T.S. Low, G.E. Stillman, High purity GaAs prepared from trimethylgallium and arsine Journal of Crystal Growth. ,vol. 55, pp. 10- 23 ,(1981) , 10.1016/0022-0248(81)90265-7