Photoluminescence of Radiation Defects in Ion-Implanted 6 H SiC

摘要: Radiation defects were introduced into $6H$ SiC by ion implantation and electron bombardment. The produce a new low-temperature luminescence that is independent of the implanted ion, one portion, ${D}_{1}$ spectrum, persists after 1700\ifmmode^\circ\else\textdegree\fi{}C anneal. A comparison spectrum in ion- electron-bombarded samples shows its intensity strongly dependent on defect concentration, suggesting center pure-defect complex, possibly divacancy. which was previously observed cubic SiC, has strong vibronic structure with localized resonant modes. In it repeated three times, due to inequivalent sites this polytype. an unusual temperature dependence, (1.4\ifmmode^\circ\else\textdegree\fi{}K) being extinguished as high-temperature (77\ifmmode^\circ\else\textdegree\fi{}K) form activated. abrupt change attributed lattice distortion at low temperature. changes annealing are correlated electrical properties ion-implanted Marsh Dunlap.