Method to avoid threshold voltage shift in thicker dielectric films
作者： Howard Rhodes , Ravi Iyer , Randhir P.S. Thakur
DOI:
关键词:
摘要: A method of fabricating an integrated circuit having reduced threshold voltage shift is provided. nonconducting region formed on the semiconductor substrate and active regions are substrate. The separated by region. barrier layer a dielectric deposited over regions. Heat applied to causing anneal.
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