Semiconductor memory device enhancing reliability in data reading
作者： Takashi Itoh , Taku Ogura , Yasuhiro Kashiwazaki , Kiyohiro Furutani , Takashi Kubo
DOI:
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摘要: An internal voltage generating circuit generates and supplies a boosted higher than an power supply voltage, as operating to sense amplifier in read for reading data of memory cell. A bit line precharge current supplied via is produced from the voltage. It possible provide nonvolatile semiconductor device, which can perform precise operation accurate even under low condition.
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