Method and apparatus for forming deposited film

摘要: A plasma CVD method adapted to a roll-to-roll process or the like wherein change rate of temperature substrate before and after an i-type semiconductor layer is deposited made rapid so as prevent diffusion impurities occurring due annealing, by constituting apparatus structure in such manner that film formed on elongated while heating moving i-layer forming discharge chamber at 4° C./second higher immediately front inlet cooling same outlet stacked-layer type photovoltaic device having large area free from scattering characteristics continuously without deterioration dopant diffusion.