Time scales of phonon-induced decoherence of semiconductor spin qubits

摘要: Decoherence of a shallow donor electron spin in Si and Ge caused by electron-lattice interaction is studied. We find that there are two time scales associated with the evolution density matrix: fast, but incomplete decay due to nonresonant phonons, followed slow relaxation resulting from flips accompanied resonant phonon emission. estimate both scales, as well magnitude initial drop coherence for P Ge, argue approach used paper suitable evaluation decoherence general class localized states semiconductors.