Temperature and dose dependence of defect complex formation with ion implanted Mn/Fe in ZnO

作者: T.E. Mølholt , R. Mantovan , H.P. Gunnlaugsson , K. Bharuth-Ram , M. Fanciulli

DOI: 10.1016/J.PHYSB.2009.08.187

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摘要: Abstract 57 Fe Mossbauer spectroscopy following ion implantation of radioactive Mn + ( T 1/2 =85.4 s) has been applied to study the formation Fe/Mn implantation-induced defects in ZnO at temperatures between 319 and 390 K. The ferric iron–vacancy complexes is found depend strongly on implanted dose be faster more efficient higher temperatures. results these suggest mobility Zn vacancy, together with vacancy trapping substitutional Mn/Fe impurities are responsible for Fe–V complexes.

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