Ohmic electrode for n-type nitride semiconductors and its manufacturing method
作者： 隆秀 城市 , Hiroaki Okagawa , Takahide Shiroichi , 広明 岡川
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摘要: PROBLEM TO BE SOLVED: To improve the surface state of an electrode while maintaining desirable ohmic contact property for comprising laminated structure containing aluminum (or alloy) layer, a barrier metal layer and Au layer. SOLUTION: An 1 is formed in 2a n-type nitride semiconductor 2. From side near 2 order, provided with first 11 thickness nm-70 nm consisting and/or alloy, second 12 one or more chosen out Pd, Ti, Nb, Mo W, third 13 as laminate. Furthermore, heat treatment performed order to make express more. The made by limitation COPYRIGHT: (C)2006,JPO&NCIPI
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