Substrate manipulation by insertion of a thin and strained 2D layer: effect on Ge/Si growth
作者： L. Simon , P. Louis , C. Pirri , D. Aubel , J.L. Bischoff
DOI: 10.1016/S0022-0248(03)01292-2
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摘要: Abstract We studied the range over which inhomogeneous interfacial strain influences hetero-epitaxial growth of Ge layers on variously modified Si(0 0 1) substrates result from insertion a thin (4.2 A) Ge-layer, giving Si/Ge/Si superstructure. A 2× N periodic array dimer vacancies is buried in Ge-layer and creates an elastic perturbation top Si-layer. This modifies subsequent Ge-layers. The critical thickness for transition between smooth (2D) corrugated (3D self-assembled hut-clusters) morphology are controlled by Si-overlayer thickness.
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