New Pair Spectra in Gallium Phosphide
作者： F. A. Trumbore , D. G. Thomas
DOI: 10.1103/PHYSREV.137.A1030
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摘要: Crystals of GaP doped with Zn+Te, Zn+Se, Cd+Te, and Cd+Se were grown from gallium-rich solutions contained in pyrolytic boron nitride crucibles, using vapor-grown as source material. The low-temperature photoluminescence these crystals reveals the presence new pair spectra involving zinc or cadmium on gallium sites tellurium selenium phosphorus (type II spectra). values (${E}_{A}+{E}_{D}$), sum acceptor donor binding energies, derived are excellent agreement predicted previously observed spectra. data all have also been recalculated to yield more consistent (${E}_{A}+{E}_{D}$) Van der Waals parameter.
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sci-hub.se 参考文章(4)
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