Origin and Tunability of Unusually Large Surface Capacitance in Doped Cerium Oxide Studied by Ambient‐Pressure X‐Ray Photoelectron Spectroscopy
作者： Chirranjeevi Balaji Gopal , Farid El Gabaly , Anthony H. McDaniel , William C. Chueh
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摘要: The volumetric redox (chemical) capacitance of the surface CeO2-δ films is quantified in situ to be 100-fold larger than bulk values under catalytically relevant conditions. Sm addition slightly lowers oxygen nonstoichiometry, but effects a 10-fold enhancement chemical by mitigating defect interactions, highlighting importance differential nonstoichiometry for catalysis.
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