Surface potential mapping of biased pn junction with kelvin probe force microscopy: application to cross-section devices
作者： A. Doukkali , S. Ledain , C. Guasch , J. Bonnet
DOI: 10.1016/J.APSUSC.2004.03.249
关键词:
摘要: Kelvin probe force microscopy (KPFM) opens up a new field of applications as advanced technique to characterize cross-sectional electric well distribution surface potential functioning integrated circuits. Original sample preparation and connecting method allowing sharp observations on the circuit cross-section with conservation power supplying is presented. This device combined KPFM an illustration innovative which allows imaging contact difference topography tested structure. Build-in derived from locate junction.
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