作者: Huaizhou Zhao , Mani Pokharel , Shuo Chen , Bolin Liao , Kevin Lukas
DOI: 10.1088/0957-4484/23/50/505402
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摘要: We present the figure-of-merit (ZT) improvement in nanostructured FeSb2−xAgx with Ag1−ySby nanoinclusions through a metal/semiconductor interface engineering approach. Owing to interfaces between and phases, as well identical work functions, both thermal conductivity electrical resistivity of nanocomposites were significantly reduced lower temperature regime compared pure FeSb2. Overall, an 70% ZT was achieved for optimized nanocomposite FeSb1.975Ag0.025/Ag0.77Sb0.23 sample, which Ag0.77Sb0.23 is about 10% by molar ratio. The results this approach clearly demonstrated concept confirmed potential strongly correlated material systems promising thermoelectric materials.