Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy.
作者： O. Makarovsky , W. H. M. Feu , A. Patanè , L. Eaves , Q. D. Zhuang
DOI: 10.1063/1.3306737
关键词:
摘要: We report an experimental study of hot electron dynamics in the narrow band gap dilute nitride alloy, InAs1−xNx, with x up to 0.6%. The sharp increase conductivity n-type InAs1−xNx at applied electric fields above 1 kV/cm demonstrates that impact ionization dominates dynamics. This observation, combined reduction energy by N-atoms, suggest prospects for use this alloy infrared avalanche photodiodes.
core.ac.uk
harvard.edu
scitation.org
warwick.ac.uk
aip.org
sci-hub.se 参考文章(22)
E. Sch�ll, Current layers and filaments in a semiconductor model with an impact ionization induced instability European Physical Journal B. ,vol. 48, pp. 153- 165 ,(1982) , 10.1007/BF01362461
Otfried Madelung, Semiconductors: Data Handbook ,(2003)
Michael Shur, GaAs devices and circuits ,(1987)
S. Kuboya, F. Nakajima, R. Katayama, K. Onabe, MOVPE growth of InAsN films on GaAs(001) substrates with an InAs buffer layer Physica Status Solidi B-basic Solid State Physics. ,vol. 243, pp. 1411- 1415 ,(2006) , 10.1002/PSSB.200565373
KM Yu, W Walukiewicz, J Wu, DE Mars, DR Chamberlin, MA Scarpulla, OD Dubon, JF Geisz, None, Mutual passivation of electrically active and isovalent impurities Nature Materials. ,vol. 1, pp. 185- 189 ,(2002) , 10.1038/NMAT754
A. Ignatov, A. Patanè, O. Makarovsky, L. Eaves, Terahertz response of hot electrons in dilute nitride Ga(AsN) alloys Applied Physics Letters. ,vol. 88, pp. 032107- ,(2006) , 10.1063/1.2164906
Peter T. Landsberg, Young‐June Yu, Nonparabolicity as a tool in band-gap engineering Journal of Applied Physics. ,vol. 63, pp. 1789- 1791 ,(1988) , 10.1063/1.339869
E P O'Reilly, A Lindsay, P J Klar, A Polimeni, M Capizzi, Trends in the electronic structure of dilute nitride alloys Semiconductor Science and Technology. ,vol. 24, pp. 033001- ,(2009) , 10.1088/0268-1242/24/3/033001
N. Armani, F. Masia, M. Capizzi, F. Martelli, M. Lazzarino, G. Bais, M. Piccin, S. Rubini, A. Franciosi, M. Felici, A. Polimeni, G. Salviati, L. Lazzarini, In‐Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors Advanced Materials. ,vol. 18, pp. 1993- 1997 ,(2006) , 10.1002/ADMA.200600487
A. Patanè, W. H. M. Feu, O. Makarovsky, O. Drachenko, L. Eaves, A. Krier, Q. D. Zhuang, M. Helm, M. Goiran, G. Hill, Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx. Physical Review B. ,vol. 80, pp. 115207- ,(2009) , 10.1103/PHYSREVB.80.115207