作者: K. Barmak , A. Gungor , C. Cabral , J. M. E. Harper
DOI: 10.1063/1.1589593
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摘要: The impact of 11 alloying elements, namely, Mg, Ti, In, Sn, Al, Ag, Co, Nb, and B, at two nominal concentrations 1 3 at. %, Ir W, only a concentration on the resistivity grain structure copper was investigated. films were electron beam evaporated onto thermally oxidized Si wafers had thicknesses in range 420–560 nm. Pure Cu used as controls. Isothermal anneals carried out 400 °C for 5 h; constant-heating rate treatments, with no hold temperature, done 3 °C to 650 950 °C. In all cases, annealing resulted lowering compared as-deposited state. Furthermore, higher temperature lower, postannealing, room-temperature resistivity, unless film agglomerated or showed evidence solute redissolution. Annealing also significant growth grains, except Nb- W-containing films. addition, sizes nominally ...