作者: Jørn M. Hvam , Claus Dörnfeld
DOI: 10.1007/978-1-4684-5661-5_17
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摘要: The direct bandgap near the visible part of optical spectrum, makes wide gap II–VI semiconductors potentially very interesting from applications point view. One can foresee widespread use in future all-optical or electro-optical devices, if some current problems preparation these materials (purity, doping, etc.) find their solution with new crystal growth techniques that are developing years.1,2 With perspectives mind, it is particular importance to investigate nonlinear optics semiconductors.