作者: Xin-Lian Chen , Bao-Jun Huang , Chang-Wen Zhang , Ping Li , Pei-Ji Wang
DOI: 10.1155/2017/4815251
关键词:
摘要: Under external transverse electronic fields and hydrogen passivation, the structure band gap of tin dioxide nanoribbons (SnO2NRs) with both zigzag armchair shaped edges are studied by using first-principles projector augmented wave (PAW) potential density function theory (DFT) framework. The results showed that structures edge SnO2NRs exhibit an indirect semiconducting nature gaps demonstrate a remarkable reduction increase field intensity, which giant Stark effect. value critical electric for bare Z-SnO2NRs is smaller than A-SnO2NRs. In addition, different passivation (Z-SnO2NRs-2H A-SnO2NRs-OH) show slightly weaker A-SnO2NRs-OH obviously enhanced while Z-SnO2NRs-2H reduce. Interestingly, Z-SnO2NRs-OH presented convert metal-semiconductor-metal under fields. end, transport properties studied. These findings provide useful ways in nanomaterial design engineering spintronics.