作者: Faisal Wani , Udai Shipurkar , Jianning Dong , Henk Polinder
DOI: 10.1109/ACCESS.2018.2879273
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摘要: This paper proposes a simplified approach to model the thermal behavior of insulated-gate bipolar transistors (IGBTs) in subsea power electronic converter. The models are based on empirical relations for natural convection water, and IGBT datasheet values. proposed can be used design converters reliability analysis their IGBTs. Experimental results provided validate model. Suggestions made minimize net resistance by introducing high conductivity material as mounting plate between cabinet walls. Impact dimensions properties junction temperature IGBTs is studied. A case study 100-kVA Results indicate that spreading resistances walls contribute significantly overall resistance. Spreading mitigated appropriate measures. Furthermore, it was observed passive cooling water not effective forced cooling. However, low cost, simple design, higher systems might make them favorable choice systems.