Potentialities of GaN-based microcavities in strong coupling regime at room temperature
作者： N Antoine-Vincent , F Natali , D Byrne , Pierre Disseix , A Vasson
DOI: 10.1016/J.SPMI.2004.09.017
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摘要: In a recent publication [N. Antoine-Vincent, F. Natali, D. Byrne, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, Semond, Massies, Phys. Rev. B 68 (2003) 153313], we have highlighted for the first time exciton–photon strong coupling in GaN-based microcavity and obtained Rabi splitting of 31 meV persistent at 77 K. Our aim is now to study feasibility microcavities which regime would be maintained room temperature. A complex heterostructure containing GaN/AlGaN quantum wells (QWs) investigated by photoreflectivity reflectivity 5 The QW thickness 3 nm Al composition barriers are respectively 0.11 10 nm. From modeling experimental spectra, values oscillator strength, energy broadening parameter fundamental transition determined; found relatively weak (15 meV). Simulations QWs then been performed including this set parameters: theoretical 34 Considering an additional induced increase temperature (23 meV), could theoretically such structure. This due low value inhomogeneous related lower than bulk GaN. influence number nature Bragg mirror on discussed realistic structures.
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