Sputtering alloy target and method of producing an alloy film
作者： Takenori Umeki , Hideo Ishihara , Yoshiharu Fukasawa , Mituo Kawai , Yasuhisa Oana
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摘要: The present invention is a sputtering target for formation of an alloy film, which comprises 15 to 50 atomic percent molybdenum or tungsten, the remaining tantalum, and concomitant impurities, can provide electrical wiring having very low specific resistance as well excellent workability stability, whereby high definition integration various elements such semiconductor devices be achieved. In consequence, it fair say that this industrially useful.
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