Ferroelectric phase transition in Ga2Te3 single crystals
作者： G.A. Gamal , M.M. Abdalrahman , M.I. Ashraf , H.J. Eman
DOI: 10.1016/J.JPCS.2004.06.010
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摘要: Abstract Measurements of the electrical conductivity and Hall effect were carried out in a wide temperature range (200–500 K) for Ga 2 Te 3 crystals. The crystals grown single crystalline form by making modification travelling heater method technique. measurements revealed unusual observations electric mobility indicating presence some type phase transitions at about 430 K. So, ferroelectric behavior was examined confirming second-order (ferroelectric) transition. An energy gap 1.21 eV depth impurity center 0.11 eV found.
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