MgGa2O4 spinel barrier for magnetic tunnel junctions: Coherent tunneling and low barrier height
作者： Yuuzo Kamiguchi , Hiroaki Sukegawa , Kazuhiro Hono , Naoharu Shimomura , Tadakatsu Ohkubo
DOI: 10.1063/1.4977946
关键词:
摘要: Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. A magnetoresistance (TMR) ratio up to 121% at room temperature (196% 4 K) was observed, suggesting a TMR enhancement the coherent tunneling effect in MgGa2O4 barrier. The layer had structure and it showed good lattice matching with Fe layers owing slight tetragonal distortion of MgGa2O4. Barrier thickness dependence resistance current-voltage characteristics revealed that height barrier is much lower than an MgAl2O4 This study demonstrates potential Ga-based oxides for MTJ barriers having large low area product.
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