作者: Valeriia Grigel , Dorian Dupont , Kim De Nolf , Zeger Hens , Mickael D. Tessier
DOI: 10.1021/JACS.6B07533
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摘要: Despite their various potential applications, InAs colloidal quantum dots have attracted considerably less attention than more classical II-VI materials because of complex syntheses that require hazardous precursors. Recently, aminophosphine has been introduced as a cheap, easy-to-use and efficient phosphorus precursor to synthesize InP dots. Here, we use aminopnictogen precursors implement similar approach for synthesizing We develop two-step method based on the combination aminoarsine arsenic reducing agent. This results in state-of-the-art with respect size dispersion band gap range. Moreover, present shell coating procedures lead InAs/ZnS(e) core/shell emit infrared region. innovative synthesis can greatly facilitate research may protocols wide range III-V