Coupled effects of electronic and nuclear energy deposition on damage accumulation in ion-irradiated SiC
作者： Lauren Nuckols , Miguel L. Crespillo , Chen Xu , Eva Zarkadoula , Yanwen Zhang
DOI: 10.1016/J.ACTAMAT.2020.08.014
关键词:
摘要: Abstract Coupling between electronic and nuclear energy dissipation in ion-irradiated, single crystal 4H-SiC has been investigated using Si, Ti, Ni ions over a range of energies at 300 K, irradiation damage accumulation is characterized Rutherford backscattering spectroscopy channeling geometry. The production rate from loss (Sn) observed to decrease with increasing (Se) the incident ions. A dynamic threshold (Se,th) determined for each ion species, which defines two regions: i) Se > Se,th, where fully suppresses due along paths, ii)
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