Absorption coefficients and exciton oscillator strengths in AlGaAs-GaAs superlattices

作者: W. T. Masselink , P. J. Pearah , J. Klem , C. K. Peng , H. Morkoç

DOI: 10.1103/PHYSREVB.32.8027

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摘要: We have experimentally determined the absolute optical-absorption coefficients and exciton oscillator strengths in AlGaAs-GaAs superlattices at liquid-helium temperatures. find that although magnitude of band-to-band absorption coefficient is essentially independent quantum-well width, due to greatly enhanced as well width becomes smaller. The energies are compared theoretical calculations shown be very good agreement. strength per unit volume proportional 1/${L}^{2}$ narrow wells. effects coupling between wells was also investigated by comparison structures with barriers 100 A\r{} those only 25 A\r{}. subband coupled decreased from their values uncoupled quantitative agreement our while decreased.

参考文章(20)
R. Dingle, W. Wiegmann, C. H. Henry, Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures Physical Review Letters. ,vol. 33, pp. 827- 830 ,(1974) , 10.1103/PHYSREVLETT.33.827
R. Dingle, A. C. Gossard, W. Wiegmann, Direct Observation of Superlattice Formation in a Semiconductor Heterostructure Physical Review Letters. ,vol. 34, pp. 1327- 1330 ,(1975) , 10.1103/PHYSREVLETT.34.1327
R. Tsu, L. L. Chang, G. A. Sai-Halasz, L. Esaki, Effects of Quantum States on the Photocurrent in a "Superlattice" Physical Review Letters. ,vol. 34, pp. 1509- 1512 ,(1975) , 10.1103/PHYSREVLETT.34.1509
R. C. Miller, D. A. Kleinman, W. T. Tsang, A. C. Gossard, Observation of the excited level of excitons in GaAs quantum wells Physical Review B. ,vol. 24, pp. 1134- 1136 ,(1981) , 10.1103/PHYSREVB.24.1134
J. C. Maan, G. Belle, A. Fasolino, M. Altarelli, K. Ploog, Magneto-optical determination of exciton binding energy in GaAs- Ga 1 − x Al x As quantum wells Physical Review B. ,vol. 30, pp. 2253- 2256 ,(1984) , 10.1103/PHYSREVB.30.2253
S. Tarucha, H. Okamoto, Y. Iwasa, N. Miura, Exciton binding energy in GaAs quantum wells deduced from magneto-optical absorption measurement Solid State Communications. ,vol. 52, pp. 815- 819 ,(1984) , 10.1016/0038-1098(84)90012-7
D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, C. A. Burrus, Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect Physical Review Letters. ,vol. 53, pp. 2173- 2176 ,(1984) , 10.1103/PHYSREVLETT.53.2173
T. Henderson, W. Kopp, R. Fischer, J. Klem, H. Morkoç, L. P. Erickson, P. W. Palmberg, Large capacity As2 source for molecular beam epitaxy Review of Scientific Instruments. ,vol. 55, pp. 1763- 1766 ,(1984) , 10.1063/1.1137654
P. Lawaetz, Valence-Band Parameters in Cubic Semiconductors Physical Review B. ,vol. 4, pp. 3460- 3467 ,(1971) , 10.1103/PHYSREVB.4.3460
D. Arnold, A. Ketterson, T. Henderson, J. Klem, H. Morkoç, Determination of the valence‐band discontinuity between GaAs and (Al,Ga)As by the use ofp+‐GaAs‐(Al,Ga)As‐p−‐GaAs capacitors Applied Physics Letters. ,vol. 45, pp. 1237- 1239 ,(1984) , 10.1063/1.95076