作者: Fa-Min Liu , Tian-Min Wang , Li-De Zhang
DOI: 10.1016/S0025-5408(02)00720-1
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摘要: Abstract Ga1−xInxSb (x=0.19, 0.38, 0.63) nanoparticles embedded in a SiO2 matrix were grown on the glass substrates by radio-frequency magnetron co-sputtering. X-ray diffraction patterns strongly support existence of nanocrystalline matrix. The changes binding energies with nanocrystals deposition have been directly observed photoemission spectroscopy, and these show Room-temperature Raman spectra that peaks Ga1−xInxSb–SiO2 composite film larger red-shift about 95.3 cm−1 (longitudinal-optical mode) 120.1 cm−1 (transverse-optical than bulk GaSb, suggesting phonon confinement tensile stress effects. Additionally, room-temperature optical transmission data exhibit large blue-shift respect to semiconductor due strong quantum effect.