Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy
作者： Hironori Okumura , Masao Kita , Kohei Sasaki , Akito Kuramata , Masataka Higashiwaki
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摘要: β-Ga 2 O 3 (010) homo-epitaxial growth was performed by plasma-assisted molecular beam epitaxy. Under Ga-rich conditions and for growth temperatures above 650 C, the growth …
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