Momentum microscopy of the layered semiconductor TiS2 and Ni intercalated Ni1/3TiS2

摘要: The detailed electronic structure of a layered semiconductor 1T-TiS2 and its modification in Ni-intercalated Ni1/3TiS2 were studied beyond the full surface Brillouin zone by use momentum microscope He-I light source on their in-situ cleaved surfaces. Clear dispersions associated with electron Fermi (FS) pockets induced self-intercalated Ti non-doped around M points, as well hole FS pocket Ni Γ point, confirmed observed high-resolution EB(kx, ky) band cross sections. A bird's eye view two-dimensional clarified many complex dispersions. experimental results are compared first-principles calculations performed for bulk one monolayer (ML)-TiS2 surface-1ML-Ni1/3TiS2. characteristic changes near level (EF) ascribed to contribution 3d states atoms C3v symmetry contrast 'D3d' intercalated Ni. importance studies is demonstrated, showing high potential microscopy.