作者: Nobuyuki Ikarashi , Kenzo Manabe
DOI: 10.1063/1.1483130
关键词:
摘要: We examined electronic structures in Zr-oxide (ZrO2) and Zr-silicate (ZrxSi1−xO2) films deposited on Si substrates by using valence-electron energy-loss spectroscopy combined with scanning transmission electron microscopy (the probe diameter was about 0.3 nm). Our analysis indicated that both excitations ZrO2 SiO2 occurred the ZrxSi1−xO2 films. Therefore, band gaps should be dominated an energy gap between O 2p Zr 4d states.