Minority carrier recombination in heavily-doped silicon
作者： M.S. Tyagi , R. Van Overstraeten
DOI: 10.1016/0038-1101(83)90174-0
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摘要: … [35] have reported a much higher'excess carrier lifetime in arsenic doped silicon samples than in antimony doped samples of comparable dopings. This is in agreement with the …
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