作者: C. Tolentino Dominguez , M. S. Vieira , R. M. Oliveira , M. Ueda , Cid B. de Araújo
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摘要: We report the first observation, to our knowledge, of ultraviolet upconversion random laser (RL) emission from ZnO films excited by three near-infrared photons in femtosecond regime. The nanostructured were fabricated on a silicon substrate using Plasma Immersion Ion Implantation and Deposition method. band-to-band excitation process led RL with incoherent feedback, emitting light at ≈390 nm. emissions one two also verified same pump geometry. results are discussed comparison previous studies is presented.