Protective layer in memory device and method therefor
作者： Boaz Eitan , Ilan Bloom
DOI:
关键词:
摘要: A method for protecting a non-volatile memory device, the including forming device polycide structure formed over non-conducting charge trapping layer, and protective layer at least portion of structure, being adapted to absorb electromagnetic wave energy having wavelength shorter than visible light. constructed in accordance with is also disclosed.
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