Growth methods of c-axis oriented MgB2 thin films by pulsed laser deposition

作者: V Ferrando , S Amoruso , E Bellingeri , R Bruzzese , P Manfrinetti

DOI: 10.1088/0953-2048/16/2/320

关键词:

摘要: High-quality MgB2 thin films have been obtained by pulsed laser deposition both on MgO and Al2O3 substrates using different methods. In the standard two-step procedure, an amorphous precursor layer is deposited at room temperature starting from stoichiometric target boron target. After this first step, it annealed in a magnesium atmosphere order to crystallize superconducting phase. The show strong c-axis orientation, evidenced XRD analysis, critical up 38 K very high fields along basal planes, 22 T 15 K. Also situ one step technique for realization of has developed. case, presence argon buffer gas during crucial, we observe dependence quality film background pressure. influence Ar confirmed time- space-resolved spectroscopy measurements emission spectrum plume. pressure strongly modifies plasma kinetics promoting excitation ionization plume species, especially most volatile Mg atoms, increasing their internal energy.

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