Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
作者： G. Dingemans , N. M. Terlinden , D. Pierreux , H. B. Profijt , M. C. M. van de Sanden
DOI: 10.1149/1.3501970
关键词:
摘要: … using and-based thermal atomic layer deposition (ALD) and plasma ALD have been revealed. A … for-based ALD before and after annealing, whereas for as-deposited ALD films with an …
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