Effect of nonstoichiometric disorder on the Hall coefficient in electron-doped Nd2−xCexCuO4+δ single crystal films
作者： T.B. Charikova , N.G. Shelushinina , G.I. Harus , I.V. Karskanov , O.E. Sochinskaya
DOI: 10.1016/J.PHYSC.2009.11.055
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摘要: Abstract Hall effect and magnetoresistivity measured in magnetic fields up to B = 9 T ( B ∥ c , J ab ) electron-doped Nd2−xCexCuO4+δ single crystal films with x = 0.14; 0.15 different oxygen content (δ) were studied a temperature range of 0.4–40 K. It was found that for the optimally doped (x = 0.15) heat treatment (annealing) under various conditions leads decrease disorder parameter, charge carriers delocalization considerable increase mean free path. On other hand, concentration path practically independent on underdoped compounds (x = 0.14).
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