Side-use of a Ge p-i-n photo diode for electrical application in a photonic BiCMOS technology
作者： S. Lischke , D. Knoll , S. Tolunay-Wipf , C. Wipf , C. Mai
DOI: 10.1109/BCTM.2016.7738970
关键词:
摘要: In this paper we demonstrate the potential use of a germanium p-i-n diode, available without additional processing effort in photonic BiCMOS technology, for electronic applications. A cut-off frequency above 400 GHz was obtained by S-parameter measurements any certain design optimization diode. The device construction on SOI yields isolation diode from substrate. Moreover, lateral current flow enables low series resistance Potential applications are antenna-switching or mixers.
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