Improved short-circuit current density of a-Si:H thin film solar cells with n-type silicon carbide layer
作者： Juanmei Duan , Weiyan Wang , Hongjiang Li , Jinhua Huang , Xuyang Fang
DOI: 10.1007/S10854-016-6007-Y
关键词:
摘要: In this work, the performance of p–i–n hydrogenated amorphous silicon thin film solar cells by adopting n-type carbide (n-SiCx:H) layer was investigated. By varying CH4/SiH4 gas flow ratio, refractive index and electrical conductivity n-SiCx:H films were changed in range 3.4 to 3.8 1.48E−5 1.24 S/cm, respectively. Compared with n-Si:H/Ag configuration, short-circuit current density (J sc ) n-SiCx:H/Ag configuration improved up 8.4%, which comparable that n-Si:H/ZnO/Ag configuration. Improved J related enhanced spectral response at long wavelength 500–800 nm. It supposed decreased resulted increased back reflectance, contributed sc. Our experiments demonstrated attractive choice because they functioned both as n-layer interlayer reflector, their deposition method compatible preparation process cells.
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