Locating La atoms in epitaxial Bi3.25La0.75Ti3O12 films through atomic resolution electron energy loss spectroscopy mapping
作者： L. Gunawan , S. Lazar , O. Gautreau , C. Harnagea , A. Pignolet
DOI: 10.1063/1.3258491
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摘要: Atomic resolution high-angle annular dark-field imaging of La-doped bismuth titanate (BLT), Bi3.25La0.75Ti3O12, has been carried out with an aberration-corrected transmission electron microscope. The HAADF image revealed the presence defects in [Bi2O2]2+ layers and extra atomic rows between [Bi2Ti3O10]2− perovskite slabs. Electron energy loss spectroscopy elemental mapping at exact location La dopants parent unit cell. These results are discussed terms large remanent polarization enhanced fatigue resistance BLT.
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