Non-volatile ferroelectric control of ferromagnetism in (Ga,Mn)As

摘要: Diluted magnetic semiconductor devices where magnetism can be controlled by an electric field are of significant interest for applications, as they combine the appealing properties multiferroics with existing technology. By using a ferroelectric polymer gate transistor device, non-volatile control over (Ga,Mn)As has now been achieved. Multiferroic structures that provide coupled and ferromagnetic responses may used in novel memory spintronic logic elements1,2,3,4. One approach towards this goal is use composites couple layers through magnetostrictive piezoelectric strain transmitted across interfaces5,6,7. However, mechanical clamping films to substrate limits their response1,8. Structures response modulated directly poled would eliminate constraint qualitatively higher level integration, combining emerging conventional microelectronics. Here, we report realization such device (Ga,Mn)As, which archetypical diluted well-understood carrier-mediated ferromagnetism, gate. Polarization reversal single voltage pulse results persistent modulation Curie temperature semiconductor. The gating made possible applying low-temperature copolymer deposition technique distinct from pre-existing technologies gates on oxides. This accomplishment opens way nanometre-scale rewritable domain patterns, operating at modest voltages subnanosecond times.