Characterization of Electronic Properties of Two-dimensional Refractory Selenides and Tellurides
作者： Chandan Biswas , Gustavo A. Lara Saenz , Dalal Fadil , Anupama B. Kaul
DOI: 10.1557/ADV.2016.525
关键词:
摘要: Transition metal dichalcogenides (TMDs) are emerging among the potential alternatives to graphene. The monolayer of TMDs can easily be exfoliated mechanically and their electronic properties also tuned by controlling number layers. possess an advantage over graphene band gap magnitude appropriate for optoelectronic applications. Here we show, such as NbSe2 MoTe2 exhibit metallic fluctuating conductance behavior respectively. Metallic conduction in was investigated under atmospheric conditions compered with vacuum conditions. Furthermore, resistance measured at low temperature up 5.6 K. above investigations clearly demonstrate ohmic respectively which could applicable devices.
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