Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking
作者： A. Dadgar , M. Poschenrieder , J. Bläsing , K. Fehse , A. Diez
DOI: 10.1063/1.1479455
关键词:
摘要: Thick, entirely crack-free GaN-based light-emitting diode structures on 2 in. Si(111) substrates were grown by metalorganic chemical-vapor deposition. The ∼2.8-μm-thick structure was using a low-temperature AlN:Si seed layer and two interlayers for stress reduction. In current–voltage measurements, low turn-on voltages series resistance of 55 Ω observed vertically contacted diode. By in situ insertion SixNy mask, the luminescence intensity is significantly enhanced. A light output power 152 μW at current 20 mA wavelength 455 nm achieved.
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