Carrier multiplication in semiconductor nanocrystals: theoretical screening of candidate materials based on band-structure effects.
作者： Jun-Wei Luo , Alberto Franceschetti , Alex Zunger
DOI: 10.1021/NL801459H
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摘要: Direct carrier multiplication (DCM) occurs when a highly excited electron−hole pair decays by transferring its excess energy to the electrons rather than lattice, possibly exciting additional pairs. Atomistic electronic structure calculations have shown that DCM can be induced Coulomb interactions, in an impact-ionization-like process whose rate is proportional density of biexciton states ρXX. Here we introduce “figure merit” R2(E) which ratio between ρXX and single-exciton ρX, restricted are coupled interactions. Using R2(E), consider GaAs, InAs, InP, GaSb, InSb, CdSe, Ge, Si, PbSe nanocrystals different sizes. Although affected both quantum-confinement effects (reflecting underly confined dot-interior states) surface effects, here interested isolate th...
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