Damage evolution in crystalline InP during irradiation with swift Xe ions
作者： P.I Gaiduk , F.F Komarov , W Wesch
DOI: 10.1016/S0168-583X(99)01005-8
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摘要: Abstract Defects in single-crystalline InP induced by relaxation of electronic excitations from 250 MeV Xe ions are investigated transmission electron microscopy (TEM) both conventional and high-resolution modes. The formation latent tracks is as a function the ion fluence irradiation temperature. morphology atomic structure analyzed. results discussed frame thermal spike approach which assumes track melting imperfect crystallization. A shock wave generation around trajectory also supposed to take place at early stage formation.
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