Review: Semiconductor Piezoresistance for Microsystems

摘要: Piezoresistive sensors are among the earliest micromachined silicon devices. The need for smaller, less expensive, higher performance helped drive early micromachining technology, a precursor to microsystems or microelectromechanical systems (MEMS). effect of stress on doped and germanium has been known since work Smith at Bell Laboratories in 1954. Since then, researchers have extensively reported microscale, piezoresistive strain gauges, pressure sensors, accelerometers, cantilever force/displacement including many commercially successful In this paper, we review history piezoresistance, its physics related fabrication techniques. We also discuss electrical noise piezoresistors, device examples design considerations, alternative materials. This paper provides comprehensive overview integrated piezoresistor technology with an introduction piezoresistivity, process material selection guidance useful engineers.