Field effect transistor from individual trigonal Se nanowire
作者： Donghuan Qin , Hong Tao , Yun Zhao , Linfeng Lan , Keith Chan
DOI: 10.1088/0957-4484/19/35/355201
关键词:
摘要: Trigonal Se nanowires (NWs) were fabricated through a high-yield chemical solution process. The morphology and structural characterization of the NWs investigated using transmission electron microscopy (TEM), high-resolution TEM (HRTEM), x-ray diffraction (XRD). results indicated that grow along crystallographic c-axis, direction which is parallel to helical chains atoms. Single NW field effect transistor (FET) devices prepared photolithographic patterning. device performance shows are p-type semiconductors displaying mobility up 30 cm2 V−1 s−1. This finding on FETs has broad implications provides very useful fundamental information necessary for future applications in fabrication high-quality other electronic devices.
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